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epitaxial heterojunction

См. также в других словарях:

  • Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… …   Wikipedia

  • Liste elektrischer Bauelemente — Dieser Artikel listet elektrische beziehungsweise elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik beziehungsweise Elektronik benötigt. Verschiedene elektronische Bauelemente Inhaltsverzeichnis …   Deutsch Wikipedia

  • Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • Bipolartransistor — Ein Bipolartransistor, im Englischen als bipolar junction transistor (BJT) bezeichnet, ist ein Transistor, bei dem Ladungsträger – negativ geladene Elektronen und positiv geladene Defektelektronen – zum Stromtransport durch den Bipolartransistor… …   Deutsch Wikipedia

  • Heterostructure-emitter bipolar transistor — The Heterojunction emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier… …   Wikipedia

  • MODFET — The modulated doping field effect transistor or modulation doped field effect transistor (MODFET) is a type of a field effect transistor, also known as the High Electron Mobility Transistor (HEMT). Like other FETs, MODFETs are used in integrated… …   Wikipedia

  • Millstone River Photonickers — is an informal affinity association of those individuals associated with the development of semiconductor diode laser technology at RCA Laboratories and its successor organization Sarnoff Corporation, as well as companies and government or… …   Wikipedia

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

  • Si/SiGe resonant interband tunnel diode — A Si/SiGe resonant interband tunnel diode (RITD) is a type of resonant interband tunnel diodeswhich is based on Si/SiGe materials.All types of tunnel diodes, including Si/SiGe resonant interband tunnel diodes,make use of the quantum mechanical… …   Wikipedia

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